Semiconductor memory device, method for repairing

专利名称：Semiconductor memory device, method for

repairing bad column and setting methodfor setting redundant information thereof

发明人：Masaru Yano申请号：US15202578申请日：20160706公开号：US09627094B2公开日：20170418

专利附图：

摘要：A method for repairing of the invention includes steps as follows: storingredundant information including an address of the bad column, identification information

for identifying a failure in which one of an even column or an odd column of the badcolumn and an address of a redundant column of a redundant memory region forrepairing the bad column; determining whether a column address of a selected column isconsistent with the address of the bad column based on the redundant information; whenconsistent, converting a column of the bad column having the failure into a column of theredundant column based on the identification information; and not converting anothercolumn of the bad column without the failure into another column of the redundantcolumn.

申请人：Winbond Electronics Corp.

地址：Taichung TW

国籍：TW

代理机构：Jianq Chyun IP Office

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