MOS technology power device with low output resist

专利名称：MOS technology power device with low

output resistance and low capacity andrelated manufacturing process

发明人：Frisina, Ferruccio,Ferla, Giuseppe,Rinaudo,

Salvatore

申请号：EP95830468.5申请日：19951106公开号：EP0772244B1公开日：20000322

摘要：A MOS technology power device comprises a plurality of elementary functionalunits, each elementary functional unit comprising a body region (3) of a first conductivitytype formed in a semiconductor material layer (2) of a second conductivity type having afirst resistivity value. Under each body region (3) a respective lightly doped region (20) ofthe second conductivity type is provided having a second resistivity value higher than saidfirst resistivity value.

申请人：CONS RIC MICROELETTRONICA,ST MICROELECTRONICS SRL

地址：IT,IT

国籍：IT,IT

代理机构：Mittler, Enrico

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